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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICM IB INC Collector-emitter voltage E SEM ANG H 2SC3212 2SC3212A OND IC CONDITIONS TOR UC VALUE 800 900 500 8 7 15 4 UNIT Open emitter V Open base Open collector V V A A A Emitter-base voltage Collector current Collector current-peak Base current TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 100 W 3 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3212 ICBO Collector cut-off current 2SC3212A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 100 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 100 |I A |I A MIN 500 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat Switching times IN Transition frequency ton Turn-on time CHA E SEM NG 2SC3212 2SC3212A 2SC3212 OND IC TOR UC 3.5 1.0 1.2 MHz |I s tstg Storage time IC=5A; VCC=200V IB1=-IB2=1A 2.5 1.0 |I |I s tf Fall time 2SC3212A 1.2 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3212 2SC3212A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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